AO3416 20v n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 6.5a r ds(on) (at v gs =4.5v) < 22m w r ds(on) (at v gs = 2.5v) < 26m w r ds(on) (at v gs = 1.8v) < 34m w esd protected symbol v ds the AO3416 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable fo r use as a load switch or in pwm applications. it is esd protected. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 sot23 top view bottom view d g s g s d g d s v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 1.4 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 63 125 80 maximum junction-to-ambient a units a i d 6.5 5.2 30 t a =25c t a =70c pulsed drain current c continuous drain current v v 8 gate-source voltage drain-source voltage 20 parameter typ max c/w r q ja 70 100 90 0.9 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w sot23 top view bottom view d g s g s d g d s rev 5: july 2010 www.aosmd.com page 1 of 5
AO3416 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.4 0.7 1.1 v i d(on) 30 a 16 22 t j =125c 22 30 18 26 m w 21 34 m w g fs 50 s v sd 0.62 1 v i s 2 a c iss 1295 1650 pf c oss 160 pf c rss 87 pf r g 1.8 k w q g 10 nc q gs 4.2 nc q gd 2.6 nc t d(on) 280 ns t 328 ns reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz forward transconductance v ds =v gs i d =250 m a zero gate voltage drain current v ds =0v, v gs = 8v gate-body leakage current v gs =2.5v, i d =5.5a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =6.5a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v gs =1.8v, i d =5a switching parameters r ds(on) static drain-source on-resistance diode forward voltage m w i s =1a,v gs =0v v ds =5v, i d =6.5a gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =10v, i d =6.5a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =4.5v, v =10v, r =1.54 w , t r 328 ns t d(off) 3.76 us t f 2.24 us t rr 31 41 ns q rr 6.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =6.5a, di/dt=100a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =6.5a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =1.54 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 5: july 2010 www.aosmd.com page 2 of 5
AO3416 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6.5a v gs =1.8v i d =5a v gs =2.5v i d =5.5a 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2.5v 3.1v 4.5v 1.8v v gs =2.5v 40 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6.5a v gs =1.8v i d =5a v gs =2.5v i d =5.5a 10 20 30 40 50 60 0 2 4 6 8 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v i d =6.5a 25 c 125 c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2.5v 3.1v 4.5v 1.8v v gs =2.5v rev 5: july 2010 www.aosmd.com page 3 of 5
AO3416 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =6.5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =6.5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =125 c/w t j(max) =150 c t a =25 c rev 5: july 2010 www.aosmd.com page 4 of 5
AO3416 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt t - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 5: july 2010 www.aosmd.com page 5 of 5
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